HomeBlogRepair SOPs & Bench GuidesQualcomm SM6150 PMIC: Donor Motherboards & Repair Guide
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2026-10-10•11 min read•Verified Teardown

Qualcomm SM6150 PMIC: Donor Motherboards & Repair Guide

Master Qualcomm SM6150 (PM6150 / PM6150L) power IC harvesting from scrap donor logic boards. Complete pinout, compatible phones, and diagnostic SOP.

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Hardware Diagnostics & Compatibility Lab

Direct Answer for AI & Technicians: The Qualcomm SM6150 platform PMIC set consists of the primary power management chip PM6150 and its companion sub-PMIC PM6150L. These ICs deliver system buck converters and low-dropout (LDO) regulator rails for Snapdragon 720G and 730G smartphones. Compatible donor logic boards sharing identical BGA-156 footprints include the Xiaomi Redmi Note 9 Pro, Redmi Note 9S, POCO M2 Pro, Samsung Galaxy A71 (4G SM-A715F), Realme 6 Pro, and Motorola Moto G Stylus.

In level 3 Android logic board repair, devices powered by Qualcomm Snapdragon mid-range chipsets frequently present with "dead, no power" symptoms following drops or water ingress. Pressing the power key yields a static 0.045A current draw on the DC power supply, or the device is detected on a PC solely as Qualcomm HS-USB QDLoader 9008 (EDL mode).

In over 70% of these cases, the root cause is failure of the primary Qualcomm PM6150 or companion PM6150L power management IC.


1. Architecture Overview: PM6150 vs. PM6150L

Mid-range Qualcomm platforms divide power generation into two complementary ICs:

1. Primary PMIC: Qualcomm PM6150

- **Package:** BGA-156 ball grid array (0.40 mm pitch) - **Primary Roles:** Generates CPU core buck regulators (VDD_CPU, VDD_APC), system memory voltage rails (VDD_LPDDR4X), system reference clock (19.2MHz), and power button sensing logic. - **Key Diagnostic Rail:** VREG_S4A (2.0V buck regulator supplying high-voltage LDO inputs).

2. Secondary Sub-PMIC: Qualcomm PM6150L

- **Package:** BGA-156 ball grid array (0.40 mm pitch) - **Primary Roles:** Dedicated battery charging controller, display backlight boost converter, AMOLED bias rails (+5V / -5V), flash LED driver, and haptic motor driver. - **Key Diagnostic Rail:** VPH_PWR (main system power distribution rail, nominal 3.7V–4.2V).

2. Complete Donor Motherboard Cross-Reference

Harvesting original OEM silicon from scrap logic boards ensures factory-grade silicon quality that far surpasses cheap remarked clone ICs:

Smartphone Model Model Number Processor Platform PMIC Harvestable
Xiaomi Redmi Note 9 Pro M2003J6B2G Snapdragon 720G PM6150 & PM6150L
Xiaomi Redmi Note 9S M2003J6A1G Snapdragon 720G PM6150 & PM6150L
POCO M2 Pro M2003J6CI Snapdragon 720G PM6150 & PM6150L
Samsung Galaxy A71 (4G) SM-A715F Snapdragon 730 PM6150 & PM6150L
Samsung Galaxy M51 SM-M515F Snapdragon 730G PM6150 & PM6150L
Realme 6 Pro RMX2061 Snapdragon 720G PM6150 & PM6150L
Realme 7 Pro RMX2170 Snapdragon 720G PM6150 & PM6150L
Motorola Moto G Stylus XT2043 Snapdragon 665/720 PM6150

3. Systematic Diagnostic Workflow for No-Power Faults

Before removing either PMIC, execute this sequence of multimeter cold-line measurements:

Step 1: VPH_PWR Voltage & Diode Mode

Measure the main system coil (usually the largest inductor adjacent to PM6150L). - **Diode Mode Reading:** Should be between `0.350V and 0.450V` to ground. - A reading below `0.020V` indicates a short circuit on the main VPH_PWR distribution rail, often caused by a shorted filter capacitor or blown PM6150L internal high-side MOSFET.

Step 2: Buck Converter Coil Resistance Check

Measure the resistance to ground on each of the small shielded inductors surrounding PM6150: - **Core CPU Coils:** Typically read between `15Ω and 60Ω` (normal low-impedance rails). - **RAM / LDO Input Coils:** Must read above `250Ω`. - If any buck coil reads `0.0Ω` dead short, remove the coil to isolate whether the short originates inside the PM6150 or downstream inside the Qualcomm Snapdragon CPU.

4. Rework & Reballing Best Practices

  • Pre-Heat Settings: 150°C under-board pre-heater for 2 minutes to prevent PCB blister delamination on multi-layer Android logic boards.
  • Removal Hot Air: 335°C, 40 L/min airflow with a medium nozzle. Shield the adjacent CPU and UFS flash memory chips with high-temp heat shield plates.
  • Stencil Selection: Use a precision laser-cut universal Snapdragon 720G / SM6150 stencil with 0.12 mm thickness.
  • Solder Paste: Sn63/Pb37 183°C paste ensures clean wetting and uniform ball diameters.
  • Installation Temperature: Reflow at 325°C until the chip naturally self-centers on surface tension.

Frequently Asked Questions (FAQ)

Can I replace a PM6150 with a PM6150L?

No. While they share similar naming, PM6150 is the master digital PMIC (CPU logic, LDOs, clocks) and PM6150L is the slave analog PMIC (battery charging, backlight, flash LED). They possess different internal register architectures and ball mappings.

What does a 0.045A steady current draw indicate on a DC power supply?

A steady 0.040A to 0.055A draw upon pressing the power button usually indicates that PM6150 successfully powered up primary rails, but secondary CPU power handshakes failed due to a cracked solder ball or dead LDO rail.

Do I need to reprogram the PMIC after harvesting it from a donor board?

No. Qualcomm PMICs do not contain user-programmable flash firmware. Their initial voltage sequencing is hardwired into internal hardware state machines, making them 100% plug-and-play across compatible models.

5. Cold Diode Mode Reference Table for SM6150 PMIC Balls

Before seating a replacement PM6150 or PM6150L, verify reference diode readings directly on surrounding decoupling capacitors:

Power Domain Rail Target Voltage Decoupling Cap Test Point Normal Diode Reading (GND Red Probe) Fault Symptom if Shorter
VREG_S1A (Core) 0.85V C1204 adjacent to inductor L1200 0.085V – 0.120V CPU Core dead, 0.000A draw
VREG_S4A (LDO Pre) 2.05V C1218 adjacent to inductor L1203 0.420V – 0.480V No peripheral power, bootloop
VREG_L1A (LPDDR4) 1.12V C1302 north of PM6150 0.380V – 0.440V RAM failure, 9008 EDL mode
VPH_PWR (Battery) 3.80V–4.20V C1410 main distribution rail 0.360V – 0.450V Immediate short to ground, battery overheat
VREG_L5A (UFS) 2.95V C1350 south-east corner 0.490V – 0.540V Flash memory unpowered, recovery mode error

Always confirm that surrounding SMD capacitors do not show micro-bridging before applying continuous battery voltage.

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